High Peak Current Density and Low Peak Voltage Strained In_(0.9-0.8)Ga_(0.1-0.2)As/AlAs RTD Grown by Metal Organic Chemical Vapor Deposition

摘要

Resonant tunneling diodes (RTDs) were grown by metal organic chemical vapor deposition (MOCVD) on a 3-inch semi-insulating InP (100) substrate with the aim of application to high-speed circuits. Fabricated RTDs feature a strained In_(0.8-0.9)Ga_(0.2-0.1)As quantum well and strained AlAs barriers. A peak current density (j_p)of 1.0 x 10~5 A/cm~2, a peak voltage (V_p) of 0.39 V, and a peak-to-valley current ratio (PVR) of 3.7 were obtained with 1.6-nm AlAs barriers and a 5.0-nm In_(0.8)Ga_(0.2)As well structure. To our knowledge, this is the first report of a MOCVD-grown RTD that exhibits j_p of～1.0 x 10~5 A/cm~2 along with low V_p and relatively large PVR in the InGaAlAs material system.