Tantalum and tantalum nitride films grown by inorganic low-temperature chemical vapor deposition for copper metallization: Chemistry, process, and material development and characterization.

摘要

Copper (Cu) is being evaluated and implemented as a highly viable interconnect material for ultra-large-scale integration (ULSI). In this respect, a critical need exists for the identification and development of diffusion barrier liners for emerging Cu-based metallization schemes. This thesis focuses on the identification, development, and optimization of a novel inorganic low temperature ;Chapter 3 presents and discusses key findings from studies to develop a low temperature thermal CVD (TCVD) process for the growth of tantalum nitride, using ;In order to resolve this critical issue, chapter 4 focused on exploring an alternative low temperature plasma-assisted CVD ;In chapter 5, the performance of the PACVD Ta films as diffusion barrier was evaluated for copper based metallization scheme, using conventional PVD Ta as reference material.;Accordingly, chapter 2 describes the key results from a study which aimed to develop and optimize a hydrogen plasma assisted CVD (PACVD) tantalum process. The purpose was to establish a fundamental understanding of the mechanisms of ;Finally, conclusions and future directions are outlined and discussed in chapter 6.