Experimental study of total ionizing dose radiation effects on MOS capacitor

摘要

The aim of this paper is to investigate the total ionizing dose (TID) radiation effects on MOS capacitor wafer samples that are locally fabricated for this purpose. The oxide was prepared by dry-wet -dry oxidation technique at 1000°C using N-type Si substrate of about 3 Ω.cm. The samples have heen exposed to irradiation at different doses from 1Krad(SiO{sub}2) up to 1Mrad(SiO{sub}2) using two different Gamma sources for high and low radiation rates, a shift in C-V curves as a flat-band shifted from 0.3 up to 2.5V and interface states of irradiated samples increased from 2.45*10{sup}12 up to 250*10{sup}12 eV{sup}(-1) cm{sup}(-2) Shelf annealing effects have also been investigated.