Plasma Process Induced Damage Study in Deep Submicron CMOS

摘要

In the present work, we propose to study the nature of the plasma damage using SEMATECH [2] test structures. The effect of plasma damage on poly and Metal 1 modules with different oxide thickness is studied in detail. The behaviour of devices under Fowler-Nordheim stress and Hot-Carrier stress conditions is compared. The comparison of degradation in the transistor parameters for devices with different antenna area [3] and types, and profiling of interface states using modified charge pumping technique is presented.