Effect of barrier width and doping on Asymetric QWIP

摘要

In asymmetric quantum well infrared photodetector with intersubband electron transition is studied. It consists of Al_(0.3)Ga_(0.7)As-GaAs-Al_(0.15)Ga_(0.85)As-Al_(0.3)Ga_(0.7)As asymmetric quantum well and Al_(0.15)Ga_(0.85)As-Al_(0.3)Ga_(0.7)As double barrier resonant tunnel region. The structure is so chosen that three energy levels are formed in quantum well region and transition between E_1-E_2 and E_1-E_3 are allowed. This can be used for dual band detection. Effect of barrier width on tunneling coefficient, dark current, photo current and generation recombination (g-r) noise are studied. Effect of doping on dark current, photocurrent, grnoise, photon noise and johnson noise are also studied. Dark current, Photocurrent and g-r noise vary with doping and barrier width.