ANTIFUSE WITH DOPED BARRIER METAL LAYER WITH DOPED BARRIER METAL LAYER

摘要

There is provided a method of forming an anti-fuse in an integrated circuit having an insulating layer on a semiconductor substrate. The method comprising: forming a first metal interconnect layer on the insulating layer; Forming a first barrier metal layer on the first metal interconnect layer; Forming a semiconductor programming layer on the first barrier metal layer; Forming a second barrier metal layer on the amorphous silicon layer; And forming a second metal interconnect layer on the second barrier metal layer. In at least one barrier metal forming step, the barrier metal is formed by sputtering a barrier metal object comprising a semiconductor dopant, such as a dopant.