Gate structure with layered gate electrode stack comprising doped polysilicon layer and gate metal layer sandwiching barrier layer of metal nitride with metal contact film deposited on polysilicon layer

摘要

Gate structure (1) of transistor in semiconductor substrate (10) is formed by structuring layered gate electrode stack (1). On gate dielectric film (9) is deposited polysilicon layer(s) and metal nitride barrier layer (7) is applied and coated with gate metal layer (8). Between polysilicon layer and barrier layer is located metal contact film (6) preventing interaction between nitrogen in barrier layer and silicon in polysilicon layer. Barrier layer is chemically, thermally and mechanically stable layer on contact film. Independent claims are included for gate structure of transistor.