Electrical and materials characterization of tungsten-titanium diffusion barrier layers and alloyed silver metallization.

摘要

With the constant miniaturization of semiconductor devices, research is always ongoing to obtain the best materials and/or materials systems which fulfill all the requirements of an ideal interconnect. Silver (Ag) and silver based alloys are front runners among other metals and alloys being investigated. Ag has a low electrical resistivity (1.59 micro-ohm-centimeters for bulk), very high thermal conductivity (4.25 Watt per centimeters per Kelvin), and has better electromigration resistance than aluminum (Al). In the pure form, however, it has several drawbacks (e.g., a tendency to diffuse in silicon substrate at higher temperatures, inadequate adhesion to silicon dioxide, poor corrosion resistance, and agglomeration at higher temperatures). These drawbacks can be circumvented by the addition of diffusion barrier layers and/or alloying in silver. The present study investigates both routes to make silver a legitimate interconnect material. Initially this study focuses on thermal stability and behavior of tungsten-titanium (W-Ti) barrier layers for Ag metallization. It is shown that Ag thin films are thermally stable up to 650 degrees centigrade with the presence of W-Ti under layers. The effect of a W-Ti layer on the {111} texture formation in Ag thin film is also evaluated in detail. Insertion of a thin W-Ti over layer on Ag thin films is investigated with respect to their thermal stability. This research also evaluates the diffusion of Ag into silicon dioxide and W-Ti barriers. This project shows that W-Ti is an effective barrier layer for silver metallization. Later, the study investigates the effect of Cu addition in silver metallization and its impact on electromigration resistance. It is shown that Cu addition enhances the electromigration lifetime for silver metallization.