Thyristor with differently doped base layers - has specified mean impurities concentration in higher doped base layer and matrix of shunt channels of specified width

摘要

One of the thyristors base layer is of p-conductivity and highly doped, while the other base layer is of n-conductivity and lowly doped. The layers are arranged between n- and p-conductivity emitter layers. From the p-conductivity base layer to the current terminal contact extend shunting channels (10) for shunting the emitter junction. The mean concentration of impurities in the highly doped base layer (2) has a max. value of 1 x 1016 cm-3. The shunting channels form a network in which the width of each channel does not exceed the diffusion length of the carrier in the highly doped base layer. Pref. the channels are arranged in the highly doped base layer in a depth corresponding to the impurity concentration of max. 1 x 1015 cm-3, and the spacing of the channels is specified.