Double hetero-structure bipolar transistor comprises a gallium-indium phosphide collector, a doped layer, a low n-doped, non-doped or low p-doped intermediate layer between the collector and base, a base, an emitter, and a contact layer

摘要

Double hetero-structure bipolar transistor comprises a gallium-indium phosphide collector (1) with a metallization, a layer (2) on the surface of the collector with a doping height of more than 1 x 1018 cm-3 n+ doped, a low n-doped, non-doped or low p-doped gallium arsenide (GaAs) intermediate layer (3) which is thinner than 20 nm between the collector and base (4), a base made from gallium arsenide, an emitter (5) made from gallium-indium phosphide, and a contact layer (8) made from gallium indium arsenide (GaInAs) and GaAs.