Evaluation of Barrier Width by Low-Frequency Capacitance Measurements for MoO_3-doped p-Type C_(60) Films

摘要

The Schottky barrier width (W_(dep)) formed at MoO_3-doped p-type C_(60)/Ag interface was evaluated by low-frequency capacitance measurements. A t relatively low-doped concen tration of 3000 ppm, W_(dep) was determined to 57 nm and the clear rectification behavior was observed. On the other hand, at heavily-doped concentration of 10000 ppm, W_(dep) shrunk to 23 nm and the quasi-ohmic behavior due to the tunneling current was ob served. Heavy doping technique can be applied to the fabrication of ohmic _(60)/lmetal contact.