Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

摘要

We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate. DC and S-parameter are discussed, together with load-pull results on devices up to 4mm gate width. A power density of 5.2 W/mm is obtained for devices up to 2 mm gate width. The maximum power level achieved is 13.8 W at 2 GHz.