High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

摘要

Excellent RF performance is reported for AlGaN HEMTs fabricated on electrically insulating SiC substrates. The transistors have an f/sub max//spl ap/42 GHz, and an f/sub T//spl ap/15 GHz. At 10 GHz, 320 /spl mu/m wide transistors had a total power of 900 mW with a gain of 6.5 dB, which corresponds to a power density of 2.8 W/mm.