Carrier capture times in 1.3μm materials: GaInN As, InGaAsP and InGaAlAs semiconductor quantum-well lasers

摘要

A fully microscopic model is used to calculate the carrier capture times in quantum-well lasers operating at wave-lengths in the 1.3 μm regime. The capture times are shown to be crucially dependent on the carrier confinement and therefore on the well and barrier materials. For a common well width of 6 nm the capture times in InP/InGaAlAs and InP/InGaAsP structures are found to be in the 5 ps range, whereas about a factor of ten longer times are predicted in GaInNAs/GaAs. By lowering the barriers using GaInNAs instead of pure GaAs or widening the well capture times similar to those in the InP-based structures can be obtained in the GaInNAs-based structure.