Reduction in the polishing residue and micro dishing induced during the plug isolation CMP using acidic slurry

摘要

In the present work, the polishing residue and micro dishing induced during the LPI (Landing Plug Isolation) CMP was quantitatively examined in slurry with different pH combining chemical dipping test and analytical method such as SEM and TEM. Using acidic slurry, we can find the effective reduction in the total number of the polishing residue N{sub}r and micro dishing generated during CMP in conventional silica-based alkaline slurry.