CHEMICAL MECHANICAL POLISHING SLURRY AND POLISHING METHOD USING THE SAME FOR PREVENTING REDUCTION OF POLISHING STOP LAYER IN THICKNESS THEREOF AND RESTRAINING DISHING PHENOMENON OF POLISHING TARGET LAYER

摘要

Purpose: it is arranged to prevent the reduction of a polish stop layer in its thickness using an identical chemical mechanical polishing slurry and a polishing method and by the way that highly selective be fixed to is constrained a dish-shaped phenomenon for polishing target layer in polish stop layer. Construction: a chemical mechanical polishing slurry includes a buffing compound. The hardness of buffing compound is higher than the hardness of polishing target layer (30). In addition, the hardness of buffing compound is lower than the hardness of a polish stop layer (31). When polishing target layer, which forms polish stop layer by copper, to be made of titanium nitride, buffing compound is made of Cr3C3 or WC.