Gated carbon nanotube emitters grown on silicon trench wells with a sidewall spacer for stable vacuum microwave devices

摘要

We present the gated carbon nanaotubes (CNTs) emitters grown on silicon trench wells with a side wall spacer for the application of vacuum microwave devices. The side wall spacer enables us to fabricate a highly stable gated CNT emitter. The developed CNT emitter can be applicable to the pre-bunched electron beam sources for microwave amplifier tubes.