Field emitter using multiwalled carbon nanotubes grown on the silicon tip region by microwave plasma-enhanced chemical vapor deposition

摘要

Carbon nanotubes (CNTs) were selectively grown on the proximity region of silicon tips by microwave plasma-enhanced chemical vapor deposition. The silicon substrate with silicon conical tips was sputtered with palladium to act as a nanocluster catalytic center for CNT nucleation. Curled and randomly oriented CNTs with diameters ranging from 150 to 200 nm were observed to grow selectively on surrounding areas of the silicon tips. Electron field emission tests show a low turn-on field of 3.2 V/μm. An emission current of 8.0μA was achieved at ～6.3 V/μm. These results show the ability to grow CNTs selectively on the silicon tip region from a catalytic metal covered surface, which may have practical applications.