MEASUREMENTS OF LOW FIELD MOBILITY IN ULTRA-THIN SOI N- AND P-MOSFETs

摘要

Low-field electron and hole effective mobilities (μ_(eff)) of ultra-thin SOI N- and P-MOSFETs, down to a silicon thickness T_(Si) of approximately 5 nm, have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (N_(inv)), ultra-thin SOI exhibit higher mobility than heavily doped bulk MOS and a weak dependence of mobility on silicon thickness. However, at small N_(inv) the mobility is clearly reduced for decreasing T_(Si), possibly due to enhanced phonon scattering in the thin quantum well.