Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation

摘要

After more than two decades of intensive research, SOI MOSFETs technology offers significant advantages in the performance of many IC products and provides a viable solution for extending Si devices in the nanometer range exploiting ultra-thin silicon layers. A key advantage of SOI versus bulk MOSFETs is the opportunity of controlling short channel effects without increasing the channel doping, thus preserving high carrier mobility. In this paper we discuss the experimental characterization of electron mobility in ultra-thin SOI MOSFETS and the latest improvements in understanding the physical scenario underlaying the experimental results.