IMPROVEMENT OF SUB-0.25 μm FULLY-DEPLETED SOI CMOS ANALOG PERFORMANCE BY THINNING THE SI FILM

摘要

The present work demonstrates that deep-submicron FD MOSFETs exhibit outstanding properties for analog applications, well superior to comparable PD or bulk Si devices, in terms of gain, frequency, noise, swing... performance, provided that full depletion is ensured in all modes of operation by correct process optimization.