Process optimization and interface control in chemical vapor deposition of high dielectric constant thin films

摘要

This paper reports our recent studies in MOCVD growth of TiO{sub}2 and BST thin films, focusing on interface control of the dielectric thin films, precursor chemistry, and process optimization. For interface control of TiO{sub}2 films on Si(100), a buffer layer was first deposited to prevent interfacial carbon contamination during low temperature film growth. Growth of BST thin films was studied using surface science techniques in conjunction with a MOCVD study. A molecular-level approach using surface science techniques probed individual precursor reaction pathways and ligand substitution. Several mechanistic questions have been addressed using isotopic labeling experiments both in a surface science apparatus and under real MOCVD processing conditions. In addition, we have found that the dielectric properties and the step coverage of BST films are strongly affected by the precursor properties. Some of the results will be summarized in this paper. More detailed description of the results can be - found elsewhere.