Dual Damascene Cu (Cu2D) is increasingly becoming the process of choice for deep submicron IC technology, using Cu both for plugs and wiring. The Cu2D manufacturing sequence includes multiple use of CMP for both dielectric planarization and for shaping plugs/wires, thereby making it an enabling operation. The paper discusses fundamental concepts of Cu CMP, including task formulation, major definitions, mechanisms of material removal and general features of the process architecture.
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