Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby

摘要

A process for manufacturing a phase change memory array, includes the steps of: forming a plurality of PCM cells (33), arranged in rows and columns; and forming a plurality of resistive bit lines (35) for connecting PCM cells (33) arranged on a same column, each resistive bit lines (35) comprising a respective phase change material portion (31'), covered by a respective barrier portion (32'). After forming the resistive bit lines (35), electrical connection structures (45, 52) for the resistive bit lines (35) are formed directly in contact with the barrier portions (32') of the resistive bit lines (35).