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Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured
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机译:以铜镶嵌技术制造相变存储器阵列的方法和由此制造的相变存储器阵列
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摘要
A process for manufacturing a phase change memory array includes the steps of: forming a plurality of phase change memory cells in an array region of a semiconductor wafer, the phase change memory cells arranged in rows and columns according to a row direction and to a column direction, respectively; forming a control circuit in a control region of the semiconductor wafer; forming a plurality of first bit line portions for mutually connecting phase change memory cells arranged on a same column; forming first level electrical interconnection structures; and forming second level electrical interconnection structures above the first level electrical interconnection structures. The first level electrical interconnection structures include second bit line portions laying on and in contact with the first bit line portions and projecting from the first bit line portions in the column direction for connecting the first bit line portions to the control circuit.
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