Atomic layer deposition of high-kappa oxides

摘要

The self-limiting film growth mechanism in atomic layer deposition (ALD) ensures excellent film conformality and uniformity over large areas,and atomic level composition and thickness control.A variety of dielectric oxides have been deposited by ALD.In this paper,ALD deposition and electrical characterization of two groups of high-kappa oxides will be examined:(i) SrTiO_3 and BaTiO_3,and (ii) Ta_2O_5 and Nb_2O_5 based solid solutions and nanolaminates.