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A COMPARISON OF COMMONALITIES AND DIFFERENCES OF SILICON-BASED THIN FILMS CVD PROCESSES FOR ULSI DEVICE TECHNOLOGY

机译:ULSI器件技术硅基薄膜CVD过程的共性和差异的比较

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Basic film step coverage and gap-fill data has been consolidated and compared with the observed silicon-based CVD kinetics trends based on some assumptions regarding reaction kinetics and mechanism. Obtained correlations are believed to be applicable for further optimization of ultra small gap filling in advanced ULSI technology.
机译:基础薄膜覆盖率和间隙填充数据已经合并,与观察到的基于硅的CVD动力学趋势相比,基于关于反应动力学和机制的一些假设。认为得到的相关性可用于进一步优化高级ULSI技术中的超小间隙填充。

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