Method for producing a silicon-based thin-film photoelectric conversion device and a plasma CVD apparatus

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can suppress deposition of a product of a reaction gas, such as powder onto a gas blow-out plate of a hollow electrode during film formation. ;SOLUTION: This apparatus includes a reaction container having an vacuum member, a first electrode provide within the container for holding a substrate to be processed, a hollow second electrode provided opposite to the first electrode within the reaction vessel, a gas supply means for supplying a reaction gas into the second electrode, and a power supply for applying a power to the second electrode. The second electrode has a gas blow-out plate having a multiplicity of holes with different shapes therein, being-provided opposed to the first electrode.;COPYRIGHT: (C)2001,JPO