Reactor Scale Simulation of Metal Oxide Deposition from an Inorganic Precursor

摘要

Chemical vapor deposition of transition metal oxides is of significant interest as a potential technique for producing materials to replace silicon dioxide as the gate dielectric layer in future metal oxide semiconductor field effect transistors. We present a study of such a deposition process for growth of thin titanium dioxide films from the inorganic precursor tetrakis nitrato titanium. A detailed reactor scale model of the deposition process is described and applied to demonstrate the key physical and chemical phenomena controlling the deposition. The model is validated by comparison with experimentally observed deposition rates and uniformity as a function of process parameters. Desirable windows of operation are identified for select process parameters, and a feasibility study is performed for an alternate reactor style.