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Atmospheric pressure chemical vapour deposition synthesis of sulfides, oxides, silicides and metal nanowires with metal chloride precursors

机译:大气压化学气相沉积法合成具有金属氯化物前体的硫化物,氧化物,硅化物和金属纳米线

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摘要

This account briefly summarizes our research on the synthesis of nanocrystals of a host of materials from metal chloride precursors via atmospheric pressure chemical vapour deposition (APCVD). Successful synthesis of nanocrystals of various sulfides, oxides, silicides, and metals, demonstrates metal chlorides as useful precursors for nanoscience and nanotechnology. Oxide-assisted growth (OAG) is found to dominate the formation of a lot of metal sulfide nanowireanosheets. Our hypotheses of geometrically kinetic competition for the interaction between the silica sheath and the inner core materials (hexagonal Fe_7S_8 and face-centred cubic Cu_(7.2)S_4) have fairly well explained the phenomena of silica vapour pressure-dependent growth of the sulfide crystals. But experimental results for some sulfides call for ab initio analysis to determine its effective region associated with torsions.
机译:该报告简要概述了我们对通过常压化学气相沉积(APCVD)由金属氯化物前体合成多种材料的纳米晶体的研究。成功合成各种硫化物,氧化物,硅化物和金属的纳米晶体,证明了金属氯化物是纳米科学和纳米技术的有用前体。发现氧化物辅助生长(OAG)主导了许多金属硫化物纳米线/纳米片的形成。我们关于二氧化硅鞘层与内芯材料(六角形Fe_7S_8和面心立方Cu_(7.2)S_4)之间相互作用的几何动力学竞争假说已经很好地解释了硫化物晶体的二氧化硅蒸汽压依赖性生长现象。但是某些硫化物的实验结果需要从头算分析,以确定其与扭转有关的有效区域。

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