Organometallic precursors for thin-film deposition of metal oxide or silicon-containing metal oxide, and deposition process of the thin films therefrom

摘要

The present invention can secure excellent thin film properties, thickness, and step coverage by organometallic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD), and has high volatility, a liquid state at room temperature, and thermally stable silicon. New single organometallic precursor compounds. The present invention also provides a thin film deposition method for forming a metal oxide and a metal silicon oxide thin film using an organometallic chemical vapor deposition method and an atomic layer deposition method using the above-described organometallic precursor compound.