RUTHENIUM DOPED INDIUM PHOSPHIDE GROWTH BY LOW PRESSURE HYDRIDE VAPOR PHASE EPITAXY

摘要

Ruthenium doped InP (InP:Ru) has been grown by low pressure hydride vapor phase epitaxy (LP-HVPE) using bis(η~5-2,4-dimethylpentadienyl) ruthenium(II) as precursor. Ruthenium concentrations in the range 2xl0~(15) to 2xl0~(18) cm~(-3) have been achieved. The Ru incorporation has been studied in terms of incorporation flux and it turns out that the growth rate is limiting the incorporation. From I-V measurements on n/InP:Ru/n and p/InP:Ru/p structures, resistivities ≥ 10~3Ωcm and ≥ 10~(10)Ωcm have been obtained, respectively.