机译:氢化物气相外延中铟辅助生长的硅上多晶磷化铟
Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;
Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;
CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano, Italy;
Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano, Italy;
Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano, Italy;
Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;
机译:氢化物气相外延中铟辅助生长的硅上多晶磷化铟
机译:增强的磷化铟衬底保护层,用于铟镓镓砷化物磷化双异质结构激光器的液相外延生长
机译:金属有机气相外延生长在砷化铟镓和磷化铟中的受控氧结合
机译:通过低压氢化物气相外延掺杂钌掺杂磷化铟生长
机译:用于砷化铟和磷化铟器件的高电阻率和晶格失配的铟砷磷和铝铟砷磷缓冲层的金属有机气相外延生长和电学表征。
机译:交叉堆叠的碳纳米管通过氢化物气相外延辅助了自支撑式GaN衬底的自分离
机译:低压MEMS光学相位调制器和硅铟磷化铟膜上的开关