BiI_3, TiI_4 and oxygen were used as precursors in a newly developed halide chemical vapor deposition process. With this process we were able to grow highly c-axis oriented Bi_4Ti_3O_(12) films onto Pt-coated silicon substrates. The total gas pressure was found to be a critical processing parameter to grow films with good crystallinity. It was found that the films grown at the highest total pressure and with the corresponding lowest total gas flow velocity had the most pronounced c-axis orientation. However, these films also contained a large number of pinholes and electrical characterization for these films were thus not possible. In contrast electrical characterization was possible for films fabricated at lower total gas pressures. For a 300 nm thick Bi_4Ti_3O_(12) film a dielectric constant around 200 and loss tan δ ～ 0.018 at 100 kHz were measured.
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