ORGANOBISMUTH COMPOUND FOR FORMING THIN FILM OF BISMUTH AND BISMUTH OXIDE BY CHEMICAL VAPOR DEPOSITION OF ORGANO-METALLIC COMPOUND HAVING HIGH VAPOR PRESSURE

摘要

PURPOSE: To form bismuth or bismuth oxide at a low temp. by bringing an organobismuth compd. represented by a specified formula into chemical vapor deposition of an organometallic compd. having high vapor pressure. ;CONSTITUTION: Bismuth or bismuth oxide is uniformly and stably obtd. at a relatively low temp. of about 450-550°C by bringing an organo-bismuth compd. represented by the formula (each of R¹ and R² is 1-4C straight chain or branched alkyl, 1-4C straight chain or branched fluoroalkyl, H or F) into chemical vapor deposition of an organometallic compd. having high vapor pressure.;COPYRIGHT: (C)1996,JPO