Lateral solid phase recrystallization(L-SPR) from the crystal seed selectrively formed by excimer laser annealing(ELA) in Ge-Ion-implanted A-Si films

摘要

A new method for the improve,ent of the electrical properties in polycrystalline silcion(poly-Si) thin-film transistors(TFTs) and the reduction in the fluctuation of characteristics among them is proposed. Poly-Si films on insulator are fist amorphized using ion implantation bechnique. As an ion implanting material, germanium ions are used because they can enlarge the grain size as compared with traditional Si ions. The drain region is recrystallized by the excimer laser annealing (ELA) process and the remaining a-Si region corresponding to the s ource and channel regions is recrystallized from the drain acting as the crystal seed by the lateral solid phase recrystallization(L-SPR) process. In this study, two experiments were performed as the basic research; the crystallinity of the seed region formed by ELA and the aspect of the L-SPR gowth grwon from the seed region were examined with TEM.