Modelling of thin-film transistors in a polycrystaline silicon layer with large craiins

摘要

When modelling a Thin-Film TSransistor (TFT) in a large grain polycrystalline silcion lyer, the Density of States (DOS) may not be averaged over the grains and grain-bundaries are introdued as narrow areas. The DOS are present only in the boundaries between the grains. The grains are s upposed to have mono-crystalline properties. The influence of the value of the DOS, the position and the number of grain-boundaries on the TFT characteristics have been systematically investiated..