Indium-Tin Oxid/Si Contacts with In-and Sn-Diffusion Barriers in Polycrystaline Si Thin-Film Transistor Liquid-Crystal Displays

摘要

Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (IFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5X10~-3 -4X10~-3 OMEGA m~2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3X10~-5 -4X10~-4 OMEGA m~2) but lower than the values obtained from ITO/Si contacts (about 1X10~-2 OMEGAm~2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.