Polycrystalline s ilicon thin film transistor using Co induced MIC

摘要

A new fabricatio process for polycrystalline silicon (poly-Si) thin-film transitros (TFTs) on glass substrate is reported. Amorphous silicon (a-Si) was crystallized by silicide-mediated crystallization (SMC) using CoSi_2 for low temperature crystallization. The a-Si film coated with 10, 000 ppm Co solution were almost completely crystallized by annealing at 500 deg C for 30 hrs. The poly-Si TFT made of SMC poly-Si exhibited a field effeclt mobility of 26 cm~2/Vsm, as threshold voltage of 0 V and a sub-threshold slpe of 0.61 V/dec.