Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have been attracting increasing interest because of their promise as a driving device in an active matrix organic light-emitting display (AMOLED) [1]. To date, numerous methods to create low-temperature poly-silicon have been suggested, because the quality of a poly-silicon is directly correlated with the performance of the transistors. Currently, the standard in the mass production of AMOLED backplanes is laser-based crystalline technology such as excimer laser annealing (ELA) [2] or sequential laser solidification (SLS) [3]. However, non-uniform characteristics caused by complexity in grain morphology control and the problem of gate oxide reliability caused by surface roughness limit its further intensive application as the demand for larger display sizes increases [4]. For these reasons, poly-Si TFT's using non-laser crystalline methods, such as metal-induced crystallization (MIC) [5], metal-induced lateral crystallization (MILC) [6], and field-aided lateral crystallization (FALC) [7] have attracted notice as promising alternatives. This is because these methods are less restricted with regard to non-uniformity or expandability, as is the case with laser crystallization methods. On the other hand, the off-state leakage current is known to be higher with non-laser crystalline
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