vertical metal induction crystallization of the amorphous silicon thin film crystallized by this method , and a polycrystalline thin film transistor using the method

摘要

A method for crystallizing amorphous silicon thin film by metal induced vertical crystallization is provided to reduce a thermal process time and manufacturing time b crystallizing an amorphous silicon thin film layer. A first amorphous silicon layer is formed on a substrate(110), and a crystallization induction metal layer is formed on the first amorphous silicon layer. A first crystallization layer(125) used as a seed layer by crystallizing first amorphous silicon layer through a first thermal process. A second amorphous silicon layer is formed on the first crystallization layer, and a second crystallization layer is formed by crystallizing the second amorphous silicon layer through a metal induction vertical crystallization by using the first crystallization as the seed layer.