One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr/sub 4/ and CCl/sub 4/

摘要

With carbon tetrabromide (CBr/sub 4/) and carbon tetrachloride (CCl/sub 4/) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr/sub 4/ and CCl/sub 4/, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction.