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MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates

机译：在图案化的GaAs衬底上AlGaAs / GaAs和InGaP / GaAs结构的MOVPE生长

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Kudela R.; Strinchovanec P.; Gregusova D.; Cambel V.; Soltys J.; Hasenhorl S.; Novak J; Kostic I.; Attolini G.; Pelosi C.;
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1. Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111) A GaAs substrates [J] . Soohaeng Cho, A. Sanz-Hervas, Jongseok Kim Microelectronics Journal . 1999,第4a5期

机译：（111）A GaAs衬底上金属有机气相外延生长及GaAs / AlGaAs和InGaAs / GaAs量子阱结构的性质
2. InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate [J] . Hung Wei Yu, Chen Chen Chung, Chin Te Wang, Japanese journal of applied physics . 2012,第8ISSUE1期

机译：带有AlGaAs / GaAs隧道二极管的InGaP / GaAs双结太阳能电池生长在偏离取向的GaAs衬底10°处
3. Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers [J] . Jingwei Guo, Hui Huang, Yizheng Ding, Journal of Crystal Growth . 2012,第期

机译：AlGaAs缓冲层在Si衬底上生长掺锌GaAs / AlGaAs异质结构纳米线
4. Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE [C] . Strichovanec P., Kudela R., Vavra I., International Conference on Advanced Semiconductor Devices and Microsystems . 2006

机译：AlGaAs / GaAs N-QWIP的暗电流由MOVPE上图案化（001）GaAs衬底准备
5. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions. [D] . Watson, John D. 2015

机译：通过分子束外延生长低无序GaAs / AlGaAs异质结构，以研究二维相关电子相。
6. Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates [O] . M Shafi, RH Mari, A Khatab, 2010

机译：在（100）和（311）B GaAs衬底上生长的GaAs / AlGaAs多量子阱的深层瞬态光谱
7. MOVPE growth and properties of 111A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures [O] . Kim Jongseok, Cho Soohaeng, Majerfeld A., 2004

机译：111 A取向压电InGaAs / GaAs / AlGaAs高应变量子阱激光器结构的MOVPE生长和性能
8. InGaAs/AlGaAs Intersubband Transition Structures Grown on InAlAs Buffer Layers on GaAs Substrates by Molecular Beam Epitaxy [R] . Katzer, D. S. , Rabinovich, W. S. , Beadie, G. 2000

机译：通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构

MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates

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