Tungsten silicide/polysilicon stack etching using mixed fluorine-chloring chemistry in a high density plasma canber

摘要

This paper presents results for the anisotropic etching of tungsten silicide/poly sislicon stacks in a high density plasma reactor usign a mixture of CI_2/N_2 and a fluoring source such as CF_4, SF_6, or NF_3. All mixtures provided acceptable etch rates, uniformities and all are thought to yield zero net deposition processes.