3C-SiC EPITAXIAL GROWTH ON LARGE-AREA Si SUBSTRATES: FABRICATION AND APPLICATIONS

摘要

The heteroepitaxial growth of 3C-SiC on Si (001) substrates was studied in a hot-wall-type low-pressure reactor. To achieve a high level of precision in 3C-SiC growth rate over a large area, self-limiting adsorption of precursors was realized by using an alternating supply of C_2H_2 and SiH_2Cl_2. The distribution of plane-defects in the grown 3C-SiC films on Si (001) substrates was observed under atomic force microscopy. Electron mobility in 3C-SiC film also varied as a function of plane-defect density. The means of reducing the plane-defect density in 3C-SiC film on Si (001) substrates are discussed using the result of Monte Carlo simulations.