Versatility in Lithographic Performance of Advanced 193 nm Contact Hole Resist

摘要

This paper introduces high performing contact hole resist targeting 65 nm node and below IC applications. Both 80 nm and 100 nm contact hole performance are evaluated under optimized condition by Prolith™ simulations and the advantage of the shrinking technique (RELACS™) is discussed for 65 nm node. The functionality of 193 nm polymers and the influence of resist components on lithographic performance are described with experimental design. The optimized resist, AZ~® AX™2050P is versatile in lithographic performance with large process window, excellent resist profile, good contact circularity and sidewall roughness. Its unusual PEB sensitivity property, resist pattern thermal flow behavior and performance with RELACS™ material are also reported. AZ~® AX™2050P has a high resolution combined with a large depth of focus and an iso-dense overlap window with RELACS™ R602 [85 nm CD (NA 0.85) DOF 0.30 μm @ Exposure latitude 8%].