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Versatility in Lithographic Performance of Advanced 193 nm Contact Hole Resist

机译:先进的193 nm接触孔抗蚀剂的光刻性能的多功能性

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This paper introduces high performing contact hole resist targeting 65 nm node and below IC applications. Both 80 nm and 100 nm contact hole performance are evaluated under optimized condition by Prolith™ simulations and the advantage of the shrinking technique (RELACS™) is discussed for 65 nm node. The functionality of 193 nm polymers and the influence of resist components on lithographic performance are described with experimental design. The optimized resist, AZ~® AX™2050P is versatile in lithographic performance with large process window, excellent resist profile, good contact circularity and sidewall roughness. Its unusual PEB sensitivity property, resist pattern thermal flow behavior and performance with RELACS™ material are also reported. AZ~® AX™2050P has a high resolution combined with a large depth of focus and an iso-dense overlap window with RELACS™ R602 [85 nm CD (NA 0.85) DOF 0.30 μm @ Exposure latitude 8%].
机译:本文介绍了针对65 nm节点及以下IC应用的高性能接触孔抗蚀剂。通过Prolith™仿真在最佳条件下评估了80 nm和100 nm接触孔的性能,并针对65 nm节点讨论了收缩技术(RELACS™)的优势。通过实验设计描述了193 nm聚合物的功能以及光刻胶组分对光刻性能的影响。经过优化的抗蚀剂AZ〜®AX™2050P具有平版印刷性能,具有宽的加工窗口,优异的抗蚀剂轮廓,良好的接触圆度和侧壁粗糙度。还报道了它具有非凡的PEB敏感性,RELACS™材料的抗蚀剂图案热流行为和性能。 AZ〜®AX™2050P具有高分辨率,宽焦距和RELACS™R602 [85 nm CD(NA 0.85)DOF 0.30μm@曝光纬度8%]等密度重叠窗口。

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