漏极接触孔到栅间距对GGNMOS保护器件的影响

摘要

研究了不同漏极接触孔到栅间距对深亚微米单叉指栅接地 N型金属氧化物半导体静电放电保护器件性能的影响,并分析了相关物理机制.基于中芯国际0.18μm互补金属氧化物半导体工艺进行流片,并进行传输线脉冲测试,得到了不同漏极接触孔到栅间距(DCGS)值的保护器件单位宽度失效电流水平的变化趋势.结合器件仿真,分析了保护器件的电、热分布情况.研究结果表明,DCGS值的增大,使电流密度峰值向远离沟道的方向移动,从而降低了尖端放电的风险.同时,当DCGS值增大到一定阈值时,由于漏区与衬底温度达到平衡,因此失效电流水平出现饱和趋势.%Based on the test data,the influence of DCGS on the single finger GGNMOS ESD protection device is investigated.The changing tendency of the failure current level is given by the TLP test under various layout parameter conditions realized in the SMIC 0.1 8μm CMOS process.Electrical and thermal distribution is detailed based on the device simulation.The results show that the peak value of the current density is moved in the opposite direction to the channel, which lowers the risk of LDD discharge. Meanwhile,the failure current level shows the saturation tendency because of the heat balance of the drain and substrate region which appears when the DCGS is raised to the threshold value.