Low temperature growth of microcrystalline SiC films by confined plasma CVD method

摘要

Microcrystalline SiC films were prepared by confined plasma CVD method using organosilicon compound diluted with hydrogen for source gas. A wire mesh electrode was inserted between the cathode and the anode of conventional diode type rf plasma apparatus. Under large dilution with hydrogen gas, excess carbon atoms were extracted from source gas during deposition. By the use of the confined plasma CVD, microcrystalline SiC films with almost stoichiometric composition were obtained.