In this paper we present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm -1 for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers.
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机译:在本文中,我们介绍了在非常低的温度范围(125-275°C)下通过热线化学气相沉积(HWCVD)沉积的掺杂μc-Si:H薄膜的新结果。通过在沉积过程中在气相中添加乙硼烷或膦来获得掺杂层。分别通过二次离子质谱和拉曼光谱研究了膜中硼和磷的掺入及其对结晶分数的影响。在该沉积方案中获得了良好的电传输性能,对于p掺杂和n掺杂的薄膜分别具有2.6和9.8 S cm -1的最佳暗电导率。还研究了氢稀释和层厚度对电性能的影响。可以从在p和n型重掺杂层之后的同一腔室中获得的名义上未掺杂的样品中得出一些有关交叉污染的技术结论。
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